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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2484 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *High Power Dissipation *Complement to Type 2SA1060 APPLICATIONS *Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 80 V 80 V 5 V 5 A 8 A 60 W .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 30mA; IB= 0 IC= 3A; IB= 0.3A B 2SC2484 MIN 80 TYP. MAX UNIT V 2.0 1.8 50 50 V V A A IC= 3A; VCE= 5V VCB= 80V; IE= 0 VEB= 3V; IC= 0 IC= 20mA ; VCE= 5V Current-Gain--Bandwidth Product hFE-2 Classifications R 40-80 Q 60-120 w w P 100-200 w. sem isc IC= 1A ; VCE= 5V IC= 3A; VCE= 5V IC= 0.5A; VCE= 5V .cn i 40 20 20 220 20 MHz isc Websitewww.iscsemi.cn 2 |
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